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  Datasheet File OCR Text:
 DC COMPONENTS CO., LTD.
R
2SC2120
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for audio frequency amplifier applications.
TO-92
Pinning
1 = Emitter 2 = Collector 3 = Base
.190(4.83) .170(4.33)
.190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 35 30 5 800 600 +150 -55 to +150 Unit V V V mA mW
o o
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
321
C
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain
(1) (1)
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
(1)
Min 35 30 5 45 100 40 2%
Typ 0.28 0.98 120 13
Max 0.1 0.1 0.7 1.3 320 -
Unit V V V A A V V MHz pF
Test Conditions IC=100A, IE=0 IC=2mA, IB=0 IE=100A, IC=0 VCB=35V, IE=0 VEB=5V, IC=0 IC=500mA, IB=20mA IC=500mA, IB=20mA IC=5mA, VCE=1V IC=100mA, VCE=1V IC=500mA, VCE=1V IC=10mA, VCE=5V VCB=10V, f=1MHz, IE=0
VCE(sat) VBE(sat) hFE1 hFE2 hFE3 fT
Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
Cob 380s, Duty Cycle
Classification of hFE2
Rank Range
O
100~200
Y
160~320


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